Mapping of integrated PIN diodes with a 3D architecture by scanning microwave impedance microscopy and dynamic spectroscopy

• Rosine Coq Germanicus,
• Peter De Wolf,
• Florent Lallemand,
• Catherine Bunel,
• Serge Bardy,
• Hugues Murray and
• Ulrike Lüders

Beilstein J. Nanotechnol. 2020, 11, 1764–1775, doi:10.3762/bjnano.11.159

• ; integrated PIN diode; nanoprobing; scanning probe microscopy (SPM); scanning microwave impedance microscopy (sMIM); spectroscopy; Introduction In “front end of line” (FEOL) processing, the control, detection, and quantification of the effective 2D distributions of active dopants in semiconductors are

• monolithic silicon integrated PIN diode with a 3D architecture. The studied device includes FEOL regions (doped semiconductors and oxides) and “back end of line” (BEOL) regions (metallic and dielectric layers). After the presentation of the results, the capabilities of the sMIM mode are discussed in detail

• the sMIM-C results. To visualise the global structure of the circular highly integrated PIN diode, the obtained mappings for VDC = 0 V on a large scanning area of 83 µm × 54 µm, corresponding to the same area as in Figure 2, are represented in Figure 7. Here, the ∂C/∂V phase mapping (Figure 7a